Heterogeneous Integration of 2D and 3D Materials
Modeling MoS₂/SiC devices using NEGF formalism
Course: EE784 - 2D Materials and Electronics Instructor: Prof. Saurabh Lodha
Duration: Mar - Apr 2025
- Modeled and simulated MoS₂/SiC Esaki diodes using NEGF formalism, reproducing experimental NDR peaks
- Developed models for MoS₂ BioFETs to study surface charge effects, predicting Vₜₕ shifts and SS trends
- Proposed a novel SiC/SiO₂/MoS₂/SiO₂/SiC RTD and its fabrication process flow for room-temperature IETS